公开(公告)号：US11804562B2

公开(公告)日：2023-10-31

申请号：US17454404

申请日：2021-11-10

Applicant: KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Sanghyeon Kim ,  DaeMyeong Geum ,  SeungYeop Ahn ,  Jinha Lim

IPC: H01L31/0352 ,  H01L31/0232 ,  H01L31/18 ,  H01L49/02 ,  H01L27/144

CPC classification number: H01L31/035236 ,  H01L27/1443 ,  H01L28/40 ,  H01L31/0232 ,  H01L31/186

Abstract: Various embodiments relate to a superlattice photodetector and a method of manufacturing the same. The superlattice photodetector includes an absorption layer for absorbing incident light and a waveguide layer coupled with the absorption layer and enabling the incident light to be waveguided within the absorption layer. The waveguide layer may include a periodic structure in which a plurality of metal patterns and a plurality of dielectric patterns are repeatedly arranged. According to various embodiments, the superlattice photodetector can be thinned while having improved performance.

公开(公告)号：US12100780B2

公开(公告)日：2024-09-24

申请号：US17182015

申请日：2021-02-22

Applicant: Korea Advanced Institute of Science and Technology

Inventor： Sanghyeon Kim ,  Juhyuk Park ,  DaeMyeong Geum

IPC: H01L27/15 ,  H01L33/00 ,  H01L33/04 ,  H01L33/30

CPC classification number: H01L33/04 ,  H01L27/156 ,  H01L33/0062 ,  H01L33/30

Abstract: Various embodiments may provide a highly efficient micro light-emitting diode (LED) in a low current range, a method of fabricating the same, and a display including the same. The micro LED includes a first conductive type semiconductor layer and a second conductive type semiconductor layer and an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer and having a single quantum well structure. The single quantum well structure may be formed so that a ratio of a conduction band offset of any one of the first conductive type semiconductor layer or the second conductive type semiconductor layer and a valence band offset of the other of the first conductive type semiconductor layer or the second conductive type semiconductor layer becomes greater than 0 and less than 1.

公开(公告)号：US11721681B2

公开(公告)日：2023-08-08

申请号：US16913593

申请日：2020-06-26

Applicant: Korea Advanced Institute of Science and Technology

Inventor： Sanghyeon Kim ,  DaeMyeong Geum

IPC: H01L25/16 ,  H01L33/00 ,  H01L33/62 ,  H01L23/00

CPC classification number: H01L25/167 ,  H01L24/09 ,  H01L24/32 ,  H01L24/33 ,  H01L24/48 ,  H01L24/73 ,  H01L33/0093 ,  H01L33/62 ,  H01L2224/02255 ,  H01L2224/09164 ,  H01L2224/32145 ,  H01L2224/33181 ,  H01L2224/48145 ,  H01L2224/73265 ,  H01L2933/0066

Abstract: Disclosed is a micro LED display having a multi-color pixel array and a method of fabricating the same based on integration with a driving circuit thereof. According to various embodiments, the display may be fabricated by providing an IC device in which a driving circuit has been wired, forming, in one surface of the IC device, a plurality of pixels on which a plurality of partial pixels for emitting different color lights has been stacked, and electrically connecting the partial pixels to the driving circuit using connection members.