公开(公告)号：US20140067346A1

公开(公告)日：2014-03-06

申请号：US14011989

申请日：2013-08-28

Applicant: KLA-Tencor Corporation

Inventor： John J. Biafore ,  Mark D. Smith ,  John S. Graves, III ,  David Blankenship

IPC: G06F19/00

CPC classification number: G06F19/702 ,  G03F7/0045

Abstract: A processor based method for measuring dimensional properties of a photoresist profile by determining a number acid generators and quenchers within a photoresist volume, determining a number of photons absorbed by the photoresist volume, determining a number of the acid generators converted to acid, determining a number of acid and quencher reactions within the photoresist volume, calculating a development of the photoresist volume, producing with the processor a three-dimensional simulated scanning electron microscope image of the photoresist profile created by the development of the photoresist volume, and measuring the dimensional properties of the photoresist profile.

Abstract translation: 一种基于处理器的方法，用于通过确定光致抗蚀剂体积内的数量的酸产生剂和猝灭剂来测量光致抗蚀剂轮廓的尺寸性质，确定由光致抗蚀剂体积吸收的光子数量，确定转化为酸的酸数发生器的数量， 在光致抗蚀剂体积内的酸和猝灭反应，计算光致抗蚀剂体积的发展，用处理器产生通过光刻胶体积的发展产生的光致抗蚀剂轮廓的三维模拟扫描电子显微镜图像，并且测量光致抗蚀剂体积的尺寸特性 光致抗蚀剂轮廓。

公开(公告)号：US09679116B2

公开(公告)日：2017-06-13

申请号：US14011989

申请日：2013-08-28

Applicant: KLA-Tencor Corporation

Inventor： John J. Biafore ,  Mark D. Smith ,  John S. Graves, III ,  David Blankenship

IPC: G06F17/50 ,  G06F19/00 ,  G03F7/004

CPC classification number: G06F19/702 ,  G03F7/0045

Abstract: A processor based method for measuring dimensional properties of a photoresist profile by determining a number acid generators and quenchers within a photoresist volume, determining a number of photons absorbed by the photoresist volume, determining a number of the acid generators converted to acid, determining a number of acid and quencher reactions within the photoresist volume, calculating a development of the photoresist volume, producing with the processor a three-dimensional simulated scanning electron microscope image of the photoresist profile created by the development of the photoresist volume, and measuring the dimensional properties of the photoresist profile.