Method for measuring positions of structures on a mask and thereby determining mask manufacturing errors
    1.
    发明授权
    Method for measuring positions of structures on a mask and thereby determining mask manufacturing errors 有权
    用于测量掩模上结构位置的方法,从而确定掩模制造误差

    公开(公告)号:US09424636B2

    公开(公告)日:2016-08-23

    申请号:US14643610

    申请日:2015-03-10

    CPC classification number: G06T7/001 G03F1/84 G06T2207/30148

    Abstract: The invention discloses a method for measuring positions of structures on a mask and thereby determining mask manufacturing errors. It is shown, that from a plurality measurement sites an influence of an optical proximity effect on a position measurement of structures on the mask, is determined with a metrology tool. A rendered image of the data representation of the structures is obtained. Additionally, at least one optical image of the pattern within the area on the mask is captured with the imaging system of the metrology tool. The field of view of the metrology tool is approximately identical to the size of the selected area of the mask design data. Finally, a residual is determined, which shows the manufacturing based proximity effect.

    Abstract translation: 本发明公开了一种用于测量掩模上结构位置的方法,从而确定掩模制造误差。 示出了从多个测量位置,使用计量工具确定光学邻近效应对掩模上的结构的位置测量的影响。 获得结构的数据表示的渲染图像。 另外,用计量工具的成像系统捕获掩模区域内的图案的至少一个光学图像。 计量工具的视野与掩模设计数据的选定区域的大小大致相同。 最后,确定残差,显示了基于制造的邻近效应。

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