公开(公告)号：US20240324180A1

公开(公告)日：2024-09-26

申请号：US18609019

申请日：2024-03-19

申请人： Kioxia Corporation

发明人： Ken SHIMOMORI ,  Takuya KIKUCHI ,  Ryosuke YAMAMOTO

IPC分类号： H10B12/00

CPC分类号： H10B12/33 ,  H10B12/05

摘要： A semiconductor device of embodiments includes: a first electrode; a second electrode; an oxide semiconductor layer between the electrodes; a gate electrode surrounding the oxide semiconductor layer; a gate insulating layer between the gate electrode and the oxide semiconductor layer and spaced from the first electrode; a first insulating layer between the first electrode and the gate electrode, the gate insulating layer between the first insulating layer and the oxide semiconductor layer; and an intermediate layer between the first electrode and the first insulating layer, including a first region and a second region between the first region and the first insulating layer. The first region contains a first metal element and oxygen, the second region contains a second metal element, and an oxygen concentration in the second region is lower than that in the first region.

公开(公告)号：US20240008257A1

公开(公告)日：2024-01-04

申请号：US18180792

申请日：2023-03-08

申请人： Kioxia Corporation

发明人： Takuya KIKUCHI ,  Masanori MIZUKOSHI ,  Ken SHIMOMORI

IPC分类号： H10B12/00

CPC分类号： H10B12/33 ,  H10B12/05

摘要： A semiconductor device includes: a first and a second insulating layer; a first conductive layer; an oxide semiconductor layer; and a third insulating layer disposed between the first insulating layer, the second insulating layer, and the first conductive layer; and the oxide semiconductor layer. The third insulating layer includes: a first part that covers a part of a side surface of the first insulating layer; and a second part that covers a part of side surfaces of the second insulating layer and the first conductive layer. A region extending in a direction different from an extending direction of the first and the second part is disposed. The region is disposed between a region corresponding to the first part and a region corresponding to the second part in a contact surface between the third insulating layer and the oxide semiconductor layer.

公开(公告)号：US20230387317A1

公开(公告)日：2023-11-30

申请号：US18178464

申请日：2023-03-03

申请人： Kioxia Corporation

发明人： Ken SHIMOMORI ,  Takuya KIKUCHI ,  Ryosuke YAMAMOTO

IPC分类号： H01L29/786 ,  H10B12/00

CPC分类号： H01L29/7869 ,  H10B12/30

摘要： According to one embodiment, a semiconductor device includes a first electrode, a second electrode, an oxide semiconductor layer provided between the first electrode and the second electrode, a gate electrode surrounding the oxide semiconductor layer, a gate insulating layer provided between the gate electrode and the oxide semiconductor layer and separated from the first electrode, a first insulating layer provided between the first electrode and the gate electrode. The gate insulating layer is between first insulating layer and the oxide semiconductor layer, and a second insulating layer is provided between the first electrode and the first insulating layer. The second insulating layer has a chemical composition or density that is different from that of the first insulating layer.

公开(公告)号：US20230307520A1

公开(公告)日：2023-09-28

申请号：US17898224

申请日：2022-08-29

申请人： KIOXIA CORPORATION

发明人： Takuya KIKUCHI ,  Yuya NAGATA ,  Masaya TODA ,  Kappei IMAMURA ,  Tsubasa IMAMURA

IPC分类号： H01L29/423 ,  H01L29/66 ,  H01L29/786 ,  H01L27/12

CPC分类号： H01L29/42384 ,  H01L29/66969 ,  H01L29/7869 ,  H01L27/1225

摘要： According to one embodiment, a method for manufacturing a semiconductor device includes forming an electrode layer on a film containing indium and etching portions of the electrode layer left exposed by a mask layer until at least a portion of the film is exposed. A spacer film is formed to cover an upper surface of the electrode layer, side surfaces of the electrode layer, and an exposed upper surface of the film. The spacer film on the upper surface of the electrode layer and the exposed upper surface of the film is removed while leaving the spacer film on the side surfaces of the electrode layer. The exposed upper surface of the film is exposed to a reductive gas plasma to reduce portions of the film. These reduced portions of the film are then etched with a chemical solution.