公开(公告)号：US20230238426A1

公开(公告)日：2023-07-27

申请号：US18192070

申请日：2023-03-29

Applicant: Huawei Technologies Co., Ltd.

Inventor： Wentao Yang ,  Boning Huang ,  Qian Zhao

IPC: H01L29/06 ,  H01L29/40

CPC classification number: H01L29/0623 ,  H01L29/404 ,  H01L29/1095

Abstract: A terminal structure of a power device includes a substrate and a plurality of field limiting rings disposed on a first surface of the substrate. The substrate includes a drift layer and a doped layer. The doped layer is formed through diffusion inward from the first surface of the substrate. The doped layer and the drift layer are a first conductivity type, and an impurity concentration of the doped layer is greater than an impurity concentration of the drift layer. The field limiting rings are a second conductivity type. In the terminal structure, lateral diffusion of impurities in the field limiting rings is limited through a design of the doped layer.