公开(公告)号：US20210249544A1

公开(公告)日：2021-08-12

申请号：US17244949

申请日：2021-04-29

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor： Sun Jin YUN ,  Kwang Hoon JUNG ,  Sohyun KIM

IPC: H01L31/0224 ,  H01L31/028 ,  H01L31/0312 ,  H01L31/0296 ,  H01L31/18 ,  H01L31/0336 ,  H01L31/0745 ,  H01L31/073 ,  H01L31/0749 ,  H01L31/032

Abstract: Provided are a solar cell and a method of manufacturing the same. The solar cell includes a substrate, a first electrode on the substrate, a second electrode on the first electrode, and at least one semiconductor layer interposed between the first and second electrodes, and a first connection layer interposed between the first electrode and the semiconductor layer and electrically connecting the first and second electrodes to each other. The first connection layer includes a plurality of two-dimensional layers vertically extending from a top surface of the first electrode to a bottom surface of the semiconductor layer. The two-dimensional layers include a metal compound.

公开(公告)号：US20200075785A1

公开(公告)日：2020-03-05

申请号：US16547055

申请日：2019-08-21

Applicant: Electronics and Telecommunications Research Institute

Inventor： Sun Jin YUN ,  Kwang Hoon JUNG ,  SOHYUN KIM

IPC: H01L31/0224 ,  H01L31/028 ,  H01L31/0312 ,  H01L31/0296 ,  H01L31/032 ,  H01L31/0336 ,  H01L31/0745 ,  H01L31/073 ,  H01L31/0749 ,  H01L31/18

Abstract: Provided are a solar cell and a method of manufacturing the same. The solar cell includes a substrate, a first electrode on the substrate, a second electrode on the first electrode, and at least one semiconductor layer interposed between the first and second electrodes, and a first connection layer interposed between the first electrode and the semiconductor layer and electrically connecting the first and second electrodes to each other. The first connection layer includes a plurality of two-dimensional layers vertically extending from a top surface of the first electrode to a bottom surface of the semiconductor layer. The two-dimensional layers include a metal compound.

公开(公告)号：US20190067005A1

公开(公告)日：2019-02-28

申请号：US16047871

申请日：2018-07-27

Applicant: Electronics and Telecommunications Research Institute

Inventor： Sun Jin YUN ,  JungWook LIM ,  Kwang Hoon JUNG ,  Hyun Jun CHAI

IPC: H01L21/02 ,  H01L21/56 ,  C23C16/30 ,  C23C16/455 ,  C23C16/56

Abstract: Provided is a method for fabricating high-uniformity and high-quality metal chalcogenide thin films. The method for fabricating metal chalcogenide thin films may include forming a metal precursor thin film including a metal thin film and a chalcogen thin film disposed on the upper surface or lower surface of the metal thin film; and performing a chalcogenization process for providing a chalcogen source on the metal precursor thin film to form a first metal chalcogenide thin film.