公开(公告)号：US20150200031A1

公开(公告)日：2015-07-16

申请号：US14333002

申请日：2014-07-16

Applicant: Electronics and Telecommunications Research Institute

Inventor： Doo Hyeb YOUN ,  Choon Gi CHOI ,  Jin Soo KIM ,  Young Jun YU ,  Jin Sik CHOI ,  Hong Kyw CHOI

IPC: H01B1/02 ,  C23C28/00 ,  C23C4/00 ,  C23C4/12 ,  C23C4/18

CPC classification number: H01B1/02 ,  Y10T428/24802

Abstract: The present invention relates to a method of fabricating a nanowire and graphene-sheet hybrid structure, and a transparent electrode employing the same, in which a hybrid structure, in which a graphene sheet is attached on surfaces of nanowires, is fabricated by fabricating a line pattern, in which nanowires are aligned in a longitudinal direction, by using an electro-spinning method, and then additionally employing a dipping method of dipping the line pattern in a graphene sheet dispersed solution, and the fabricated hybrid structure is applied to the transparent electrode. Accordingly, a crosslinking portion is increased by decreasing a distance between nanowires present inside the line pattern to improve a conductive property of a nanowire metal line. Further, the nanowire with a relative uniform density is present within the fabricated line pattern, so that when the line pattern is fabricated on the entire substrate, it is possible to achieve a uniform distribution of nanowires over a large area. Further, the surfaces of the nanowires are covered by the graphene sheet by adopting the dipping process of dipping the nanowire line pattern in a dispersion solution in which the graphene sheet is evenly dispersed, thereby preventing oxidation of the nanowire due to a contact with air during a thermal treatment process.

Abstract translation: 本发明涉及一种制造纳米线和石墨烯片混合结构的方法，以及使用该方法的透明电极，其中在纳米线的表面上附着石墨烯片的混合结构通过制造线 图案，其中纳米线在纵向方向上排列，通过使用电纺丝方法，然后另外使用将线图案浸渍在石墨烯片分散溶液中的浸渍方法，并将所制备的混合结构应用于透明电极 。 因此，通过减少线阵列内存在的纳米线之间的距离来提高交联部分，从而提高纳米线金属线的导电性能。 此外，具有相对均匀密度的纳米线存在于所制造的线图案中，使得当在整个基板上制造线图案时，可以在大面积上实现纳米线的均匀分布。 此外，通过采用将纳米线线图案浸渍在其中石墨烯片均匀分散的分散溶液中的浸渍方法，由石墨烯片覆盖纳米线表面，从而防止由于与空气接触而引起的纳米线氧化 热处理工艺。

公开(公告)号：US20150228481A1

公开(公告)日：2015-08-13

申请号：US14258416

申请日：2014-04-22

Applicant: Electronics and Telecommunications Research Institute

Inventor： Young Jun YU ,  Jin Soo KIM ,  Hong Kyw CHOI ,  Jin Sik CHOI ,  Jin Tae KIM ,  Kwang Hyo CHUNG ,  Doo Hyeb YOUN ,  Choon Gi CHOI

IPC: H01L21/02

CPC classification number: H01L21/02628 ,  B82Y10/00 ,  H01L21/02381 ,  H01L21/02422 ,  H01L21/02568 ,  H01L21/0259 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/1606 ,  H01L29/24 ,  H01L29/778

Abstract: Disclosed is a method of manufacturing a junction electronic device by disposing 2-Dimensional (2D) materials at desired positions by chemically exfoliating the 2D materials, and the method includes: forming a pattern by surface-treating a surface of a substrate; transferring a 2D material by spraying a liquid solution, in which 2D material flakes are dissolved, onto the substrate on which the pattern is formed; forming first electrodes at both sides of the 2D material disposed on the substrate; forming a dielectric layer on the first electrodes; and forming a second electrode on the dielectric layer.

Abstract translation: 公开了一种通过化学剥离2D材料将2维（2D）材料设置在所需位置上来制造结电子器件的方法，该方法包括：通过对衬底的表面进行表面处理来形成图案; 通过将2D材料薄片溶解的液体溶液喷射到其上形成图案的基板上来转移2D材料; 在设置在基板上的2D材料的两侧形成第一电极; 在所述第一电极上形成介电层; 以及在所述电介质层上形成第二电极。

公开(公告)号：US20160091447A1

公开(公告)日：2016-03-31

申请号：US14711520

申请日：2015-05-13

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor： Young Jun YU ,  Jin Sik CHOI ,  Choon Gi CHOI ,  Hong Kyw CHOI ,  Jin Soo KIM ,  Jin Tae Kim ,  Kwang Hyo CHUNG ,  Jong Ho CHOE

IPC: G01N27/12

CPC classification number: G01N27/125 ,  B82Y30/00

Abstract: Provided herein is a gas sensor apparatus including a first sensor unit, second sensor unit, and signal processing unit. The first sensor unit has a channel area doped to an n-type such that it may selectively react to a donor molecule in gas. The second sensor unit has a channel area doped to a p-type such that it may selectively react to an acceptor molecule in gas. The signal processing unit receives a sense signal of the donor molecule from the first sensor unit and a sense signal of the acceptor molecule from the second sensor unit, processes the received sense signals and generates result data of processing the received sense signals. Therefore, the gas sensor apparatus may selectively sense donor gas and acceptor gas.

Abstract translation: 本文提供了一种气体传感器装置，其包括第一传感器单元，第二传感器单元和信号处理单元。 第一传感器单元具有掺杂到n型的通道区域，使得其可以选择性地与气体中的供体分子反应。 第二传感器单元具有掺杂到p型的通道区域，使得其可以选择性地与气体中的受体分子反应。 信号处理单元从第一传感器单元接收施主分子的感测信号和来自第二传感器单元的受主分子的感测信号，处理接收到的感测信号并产生处理接收的感测信号的结果数据。 因此，气体传感器装置可以选择性地感测供体气体和受体气体。

公开(公告)号：US20150191358A1

公开(公告)日：2015-07-09

申请号：US14314153

申请日：2014-06-25

Applicant: Electronics and Telecommunications Research Institute

Inventor： Jin Sik CHOI ,  Hong Kyw CHOI ,  Ki Chul KIM ,  Young Jun YU ,  Jin Soo KIM ,  Choon Gi CHOI

IPC: C01B31/04

CPC classification number: C01B31/0453 ,  C01B32/186 ,  H01L21/0425 ,  Y10T428/24802 ,  Y10T428/24851

Abstract: Disclosed are a method of growing a high-quality single layer graphene by using a Cu/Ni multi-layer metallic catalyst, and a graphene device using the same. The method controls and grows a high-quality single layer graphene by using the Cu/Ni multilayer metallic catalyst, in which a thickness of a nickel lower layer is fixed and a thickness of a copper upper layer is changed in a case where a graphene is grown by a CVD method. According to the method, it is possible to obtain a high-quality single layer graphene, and improve performance of a graphene application device by utilizing the high-quality single layer graphene and thus highly contribute to industrialization of the graphene application device.

Abstract translation: 公开了通过使用Cu / Ni多层金属催化剂生长高质量单层石墨烯的方法和使用其的石墨烯装置。 该方法通过使用Cu / Ni多层金属催化剂来控制和生长高质量的单层石墨烯，其中在下列情况下，固定有镍下层的厚度和铜上层的厚度，在石墨烯为 通过CVD法生长。 根据该方法，可以通过利用高品质的单层石墨烯来获得高品质的单层石墨烯，并提高石墨烯应用装置的性能，从而对石墨烯施加装置的工业化起到非常重要的作用。