公开(公告)号：US20190378716A1

公开(公告)日：2019-12-12

申请号：US16434143

申请日：2019-06-06

Applicant: Electronics and Telecommunications Research Institute

Inventor： Bok Ki MIN ,  Choon Gi CHOI

IPC: H01L21/02 ,  H01L21/38 ,  H01L21/477 ,  H01L29/06 ,  H01L29/16 ,  C23C14/06 ,  C23C16/455

Abstract: Provided is an infrared optical sensor including a substrate, a channel layer on the substrate, optical absorption structures dispersed and disposed on the channel layer, and electrodes disposed on the substrate, and disposed on both sides of the channel layer, wherein the channel layer and the optical absorption structures include transition metal dichalcogenides.

公开(公告)号：US20210349045A1

公开(公告)日：2021-11-11

申请号：US17314038

申请日：2021-05-06

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor： Choon Gi CHOI ,  Mondal SHUVRA ,  Bok Ki MIN ,  Yoonsik YI

IPC: G01N27/12 ,  H01H13/70 ,  H01H13/04 ,  G01K7/02 ,  G01K7/16

Abstract: Provided is a button device including a humidity sensor. The button device includes a substrate having a plurality of sensing regions, a housing on the substrate, the housing separating a first sensing region of the plurality of sensing regions from other sensing regions, a porous structure within the housing, the porous structure having through-holes, a first electrode on the porous structure, a second electrode on the porous structure, the second electrode being electrically connected to the first electrode through the porous structure, and a temperature sensor disposed adjacent to the first sensing region to sense a temperature of the first sensing region, The porous structure includes a body having an outer surface defining the through-holes, the body having an air gap therein.

公开(公告)号：US20200170149A1

公开(公告)日：2020-05-28

申请号：US16566221

申请日：2019-09-10

Applicant: Electronics and Telecommunications Research Institute

Inventor： Seong Jun KIM ,  Choon Gi CHOI ,  Tam Van Nguyen ,  Bok Ki MIN ,  Shuvra MONDAL ,  Yoonsik YI

IPC: H05K9/00 ,  G01L1/22 ,  G01K7/22 ,  B82Y15/00 ,  B82Y30/00

Abstract: Provided is a temperature-pressure complex sensor with an anti-radiation property including a first sensing material which is a porous conductive film, and second sensing materials which are dispersedly disposed on a surface of the first sensing material. The second sensing materials may include a conductive structure having a two-dimensional crystal structure, and nanoparticles having a radiation shielding property which are disposed between crystal layers of the conductive structure.