公开(公告)号：US10580714B2

公开(公告)日：2020-03-03

申请号：US16175284

申请日：2018-10-30

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor： Sun Jin Yun ,  Junjae Yang ,  Changbong Yeon ,  JungWook Lim

IPC: H01L21/02 ,  H01L23/31 ,  H01L29/16 ,  H01L23/29 ,  H01L29/24

Abstract: Provided is method of manufacturing a conductive film. The method includes forming a conductive film including a plurality of flakes on a substrate, wherein the conductive film is a semiconductor or a conductor, and forming a passivation region selectively on a boundary between the flakes adjacent to each other. The passivation region includes a metal compound selected from the group consisting of metal chalcogenide and transition metal chalcogenide. The forming of the passivation region includes providing a solution containing a first precursor including a cation of the metal compound and a second precursor including an anion of the metal compound on the conductive film. pH of the solution is between 7.0 and 10.0.