公开(公告)号：US20190074392A1

公开(公告)日：2019-03-07

申请号：US16122634

申请日：2018-09-05

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor： Hyun-Tak KIM ,  Jin Cheol CHO ,  Tetiana SLUSAR

IPC: H01L31/032 ,  H01L27/144 ,  H01L31/18

Abstract: Electromagnetic sensor of an oxygen-rich vanadium oxide and the system thereof are provided. The electromagnetic sensor of an oxygen-rich vanadium oxide according the embodiment of the present invention comprises; the first substance layer containing silicon doped with an n-type dopant; and the second substance layer arranged on the first substance layer, and containing a vanadium oxide represented by the molecular formula of VxOy. Dopant concentration of the first substance layer can be higher than 1.0×1015 cm−3 and lower than 1.0×1019 cm−3, while the ratio of y to x in the molecular formula can be larger than 2 and smaller than 2.5.