公开(公告)号：US11013442B2

公开(公告)日：2021-05-25

申请号：US15065755

申请日：2016-03-09

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor： Yong Hee Kim ,  Sang-Don Jung ,  Gook Hwa Kim ,  Ah Young Kim

IPC: A61B5/24 ,  A61B5/25 ,  A61N1/05 ,  C23C14/08 ,  A61B5/00

Abstract: Disclosed are a neural electrode for measuring a neural signal and a method for manufacturing the same. In the method, an indium tin oxide (ITO) electrode is formed on a substrate, an insulative passivation layer is formed on the substrate and the ITO electrode to expose a portion of the ITO electrode, and ITO nanorods are formed on the portion of the ITO electrode and the insulative passivation layer. Accordingly, it is possible to reduce electrical noise and improve a neurotrophic property by using the existing process.