PLASMA UNIFORMITY CONTROL SYSTEM AND METHODS

    公开(公告)号:US20240258070A1

    公开(公告)日:2024-08-01

    申请号:US18104108

    申请日:2023-01-31

    CPC classification number: H01J37/3211 H01J37/32174 H01J2237/3344

    Abstract: Embodiments of the present disclosure include an apparatus and methods for the plasma processing of a substrate. Some embodiments are directed to a plasma processing chamber. The plasma processing chamber generally includes a planar coil region comprising a plurality of planar coils, a first power supply circuit coupled to at least two of the plurality of planar coils, a concentric coil region at least partially surrounding the planar coil region, and a second power supply circuit coupled to at least two of a plurality of concentric coils. The first power supply circuit may be configured to bias the at least two of the plurality of planar coils to affect a plasma in a center region of the plasma processing chamber, and the second power supply circuit may be configured to bias the at least two of the plurality of concentric coils to affect the plasma in an outer region.

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