SITU CLEAN FOR BEVEL AND EDGE RING
    1.
    发明公开

    公开(公告)号:US20230386823A1

    公开(公告)日:2023-11-30

    申请号:US17829288

    申请日:2022-05-31

    CPC classification number: H01L21/02087 H01J37/3244 H01J2237/335

    Abstract: Embodiments disclosed herein include a method for cleaning a bevel area of a substrate support disposed within a plasma processing chamber. In one example the method begins by placing a cover substrate on a substrate support disposed in an interior volume of a processing chamber. A cleaning gas is provided into the interior volume of the processing chamber. A plasma is struck in the interior volume of the processing chamber. A cleaning gas is provided through the substrate support to a bevel edge area defined between an outer diameter of the cover substrate and an edge ring disposed on the substrate support.

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