公开(公告)号：US20220415649A1

公开(公告)日：2022-12-29

申请号：US17902357

申请日：2022-09-02

Applicant: Applied Materials, Inc.

Inventor： Chunming ZHOU ,  Jothilingam RAMALINGAM ,  Yong CAO ,  Kevin Vincent MORAES ,  Shane LAVAN

IPC: H01L21/02 ,  H01L21/677

Abstract: Embodiments of the present disclosure generally relate to methods and apparatus for backside stress engineering of substrates to combat film stresses and bowing issues. In one embodiment, a method of depositing a film layer on a backside of a substrate is provided. The method includes flipping a substrate at a factory interface so that the backside of the substrate is facing up, and transferring the flipped substrate from the factory interface to a physical vapor deposition chamber to deposit a film layer on the backside of the substrate. In another embodiment, an apparatus for depositing a backside film layer on a backside of a substrate, which includes a substrate supporting surface configured to support the substrate at or near the periphery of the substrate supporting surface without contacting an active region on a front side of the substrate.

公开(公告)号：US20230335393A1

公开(公告)日：2023-10-19

申请号：US18337319

申请日：2023-06-19

Applicant: Applied Materials, Inc.

Inventor： Chunming ZHOU ,  Jothilingam RAMALINGAM ,  Yong CAO ,  Kevin Vincent MORAES ,  Shane LAVAN

IPC: H01L21/02 ,  H01L21/677

CPC classification number: H01L21/02266 ,  H01L21/67745 ,  H01L21/67742

Abstract: Embodiments of the present disclosure generally relate to methods and apparatus for backside stress engineering of substrates to combat film stresses and bowing issues. In one embodiment, a method of depositing a film layer on a backside of a substrate is provided. The method includes flipping a substrate at a factory interface so that the backside of the substrate is facing up, and transferring the flipped substrate from the factory interface to a physical vapor deposition chamber to deposit a film layer on the backside of the substrate. In another embodiment, an apparatus for depositing a backside film layer on a backside of a substrate, which includes a substrate supporting surface configured to support the substrate at or near the periphery of the substrate supporting surface without contacting an active region on a front side of the substrate.

公开(公告)号：US20200350160A1

公开(公告)日：2020-11-05

申请号：US16847455

申请日：2020-04-13

Applicant: Applied Materials, Inc.

Inventor： Chunming ZHOU ,  Jothilingam RAMALINGAM ,  Yong CAO ,  Kevin Vincent MORAES ,  Shane LAVAN

IPC: H01L21/02 ,  H01L21/677

Abstract: Embodiments of the present disclosure generally relate to methods and apparatus for backside stress engineering of substrates to combat film stresses and bowing issues. In one embodiment, a method of depositing a film layer on a backside of a substrate is provided. The method includes flipping a substrate at a factory interface so that the backside of the substrate is facing up, and transferring the flipped substrate from the factory interface to a physical vapor deposition chamber to deposit a film layer on the backside of the substrate. In another embodiment, an apparatus for depositing a backside film layer on a backside of a substrate, which includes a substrate supporting surface configured to support the substrate at or near the periphery of the substrate supporting surface without contacting an active region on a front side of the substrate.