公开(公告)号：US20180025914A1

公开(公告)日：2018-01-25

申请号：US15216948

申请日：2016-07-22

Applicant: Applied Materials, Inc.

Inventor： Hailong ZHOU ,  Gene LEE ,  Abhijit PATIL ,  Shan JIANG ,  Akhil MEHROTRA ,  Jonathan KIM

IPC: H01L21/311 ,  H01L21/02

CPC classification number: H01L21/31116 ,  H01L21/02167 ,  H01L21/02274 ,  H01L21/0276 ,  H01L21/31144

Abstract: Methods for etching a bottom anti-reflective coating (BARC) and/or an anti-reflective coating (ARC) and/or a dielectric anti-reflective coating (DARC) to form high aspect ratio features using an etch process are provided. The methods described herein advantageously facilitate profile and dimension control of features with high aspect ratios through a proper sidewall and bottom management scheme during the bottom anti-reflective coating (BARC) and/or an anti-reflective coating (ARC) and/or a dielectric anti-reflective coating (DARC) open process. In one embodiment, a method for etching a dielectric anti-reflective coating (DARC) layer to form features in the DARC layer includes supplying an etching gas mixture onto a DARC layer disposed on a substrate, wherein the substrate is disposed on a substrate support pedestal assembly disposed in a processing chamber, controlling a temperature of the substrate support pedestal assembly greater than 110 degrees Celsius, and etching the DARC layer disposed on the substrate.