公开(公告)号：US20140116470A1

公开(公告)日：2014-05-01

申请号：US14149526

申请日：2014-01-07

Applicant: Applied Materials, Inc.

Inventor： Jie SU ,  Lori D. WASHINGTON ,  Sandeep NIJHAWAN ,  Olga KRYLIOUK ,  Jacob GRAYSON ,  Sang Won KANG ,  Dong Hyung LEE ,  Hua CHUNG

IPC: C23C16/44

CPC classification number: C23C16/4405 ,  C23C16/4404 ,  C23C16/45574 ,  H01L21/67115

Abstract: A method and apparatus for removing deposition products from internal surfaces of a processing chamber, and for preventing or slowing growth of such deposition products. A halogen containing gas is provided to the chamber to etch away deposition products. A halogen scavenging gas is provided to the chamber to remove any residual halogen. The halogen scavenging gas is generally activated by exposure to electromagnetic energy, either inside the processing chamber by thermal energy, or in a remote chamber by electric field, UV, or microwave. A deposition precursor may be added to the halogen scavenging gas to form a deposition resistant film on the internal surfaces of the chamber. Additionally, or alternately, a deposition resistant film may be formed by sputtering a deposition resistant metal onto internal components of the processing chamber in a PVD process.

Abstract translation: 一种用于从处理室的内表面去除沉积产物并用于防止或减缓这种沉积产物的生长的方法和装置。 将含卤素气体提供到室以蚀刻掉沉积产物。 将卤素清除气体提供到室以除去任何残留的卤素。 卤素清除气体通常通过暴露于电磁能（通过热能在处理室内）或通过电场，UV或微波在远程室中而被激活。 可以将沉积前体添加到卤素清除气体中，以在室的内表面上形成耐沉积膜。 另外，或者也可以通过在PVD工艺中将耐沉积金属溅射到处理室的内部部件上来形成耐沉积膜。