公开(公告)号：US20190252162A1

公开(公告)日：2019-08-15

申请号：US16269376

申请日：2019-02-06

Applicant: Applied Materials, Inc.

Inventor： Jun MA ,  Chen-An CHEN

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/687 ,  C23C16/458

CPC classification number: H01J37/32724 ,  C23C16/4581 ,  C23C16/4586 ,  H01J2237/3321 ,  H01J2237/3341 ,  H01L21/67248 ,  H01L21/67253 ,  H01L21/68735

Abstract: A pedestal for a semiconductor processing chamber is provided. The pedestal includes a first body comprising a ceramic material, wherein a plurality of heater elements are encapsulated within the first body, and a second body comprising a ceramic material, wherein one or more continuously curved grooves are formed in one or more surfaces of the second body. Additionally, the first body is coupled to the second body and encloses the grooves.

公开(公告)号：US20180323039A1

公开(公告)日：2018-11-08

申请号：US15961282

申请日：2018-04-24

Applicant: Applied Materials, Inc.

Inventor： Hyungje WOO ,  Juan Carlos ROCHA-ALVAREZ ,  Chen-An CHEN ,  Ajit BALAKRISHNA

IPC: H01J37/32 ,  H01L21/683

CPC classification number: H01J37/3299 ,  H01J37/32174 ,  H01J37/32541 ,  H01J2237/3321 ,  H01J2237/3323 ,  H01J2237/3344 ,  H01L21/6833

Abstract: The present disclosure relates to methods and apparatuses for controlling a plasma sheath near a substrate edge. The method includes changing the voltage/current distribution across a central electrode and an annular electrode within the substrate assembly to facilitate the spatial distribution of the plasma across the substrate. The method also includes applying a first radio frequency power to a central electrode embedded in a substrate support and applying a second radio frequency power to an annular electrode embedded in the substrate support at a location different than the central electrode. The annular electrode is spaced from the central electrode and circumferentially surrounds the central electrode. The method also includes monitoring parameters of the first and second radio frequency powers and adjusting one of the first and second radio frequency powers based on the monitored parameters.

公开(公告)号：US20210040617A1

公开(公告)日：2021-02-11

申请号：US16980325

申请日：2019-03-13

Applicant: Applied Materials, Inc.

Inventor： Zubin HUANG ,  Rui CHENG ,  Chen-An CHEN ,  Karthik JANAKIRAMAN

IPC: C23C16/50 ,  C23C16/24 ,  C23C16/455

Abstract: Method for depositing amorphous silicon materials are provide and include generating a plasma within a plasma unit in fluid communication with a process chamber and flowing the plasma through an ion suppressor to produce an activated fluid containing reactive species and neutral species. The activated fluid either contains no ions or contains a lower concentration of ions than the plasma. The method further includes flowing the activated fluid into a first inlet of a dual channel showerhead within the process chamber and flowing a silicon precursor into a second inlet of the dual channel showerhead. Thereafter, the method includes flowing a mixture of the activated fluid and the silicon precursor out of the dual channel showerhead and forming an amorphous silicon layer on a substrate disposed in the process chamber.