LARGE AREA HIGH RESOLUTION FEATURE REDUCTION LITHOGRAPHY TECHNIQUE

    公开(公告)号:US20200264518A1

    公开(公告)日:2020-08-20

    申请号:US16276860

    申请日:2019-02-15

    Inventor: Arvinder CHADHA

    Abstract: Embodiments described herein provide a method of large area lithography. One embodiment of the method includes projecting at least one incident beam to a mask in a propagation direction of the at least one incident beam. The mask having at least one period of a dispersive element that diffracts the incident beam into order mode beams having one or more diffraction orders with a highest order N greater than 1. The one or more diffraction orders provide an intensity pattern in a medium between the mask and a substrate having a photoresist layer disposed thereon. The intensity pattern includes a plurality of intensity peaks defined by sub-periodic patterns of the at least one period. The intensity peaks write a plurality of portions in the photoresist layer such that a number of the portions in the photoresist layer corresponding to the at least one period is greater than N.

    3D DISPLAYS
    7.
    发明申请
    3D DISPLAYS 审中-公开

    公开(公告)号:US20190391448A1

    公开(公告)日:2019-12-26

    申请号:US16257379

    申请日:2019-01-25

    Abstract: Embodiments described herein relate to three dimensional (3D) display apparatus. In one embodiment, the 3D display apparatus include a polychromatic backlight unit comprising an emissive light source, a collimator comprising a plurality of collimating features coupled to and in optical communication with the backlight unit, and a diffractive element comprising a plurality of gratings coupled to and in optical communication with the collimator. In other embodiments, the 3D display apparatus includes a monochromatic backlight unit, an LCD module, and a quantum dot containing film.

Patent Agency Ranking