公开(公告)号：US20170365468A1

公开(公告)日：2017-12-21

申请号：US15674606

申请日：2017-08-11

Applicant: Applied Materials, Inc.

Inventor： Bo ZHENG ,  Avgerinos V. GELATOS ,  Anshul VYAS ,  Raymond Hoiman HUNG

IPC: H01L21/02 ,  C23C16/44 ,  C23C16/48 ,  H01L21/67 ,  C23C16/02

CPC classification number: H01L21/02661 ,  C23C16/0245 ,  C23C16/4405 ,  C23C16/481 ,  H01L21/02046 ,  H01L21/02049 ,  H01L21/02057 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02639 ,  H01L21/67115 ,  H01L21/67184 ,  H01L21/67207

Abstract: The present disclosure generally relates to methods for removing contaminants and native oxides from substrate surfaces. The method includes exposing a surface of the substrate to first hydrogen radical species, wherein the substrate is silicon germanium having a concentration of germanium above about 30%, then exposing the surface of the substrate to a plasma formed from a fluorine-containing precursor and a hydrogen-containing precursor, and then exposing the surface of the substrate to second hydrogen radical species.

公开(公告)号：US20160079062A1

公开(公告)日：2016-03-17

申请号：US14846215

申请日：2015-09-04

Applicant: Applied Materials, Inc.

Inventor： Bo ZHENG ,  Avgerinos V. GELATOS ,  Anshul VYAS ,  Raymond Hoiman HUNG

IPC: H01L21/02 ,  H01L29/161 ,  H01L21/324

CPC classification number: H01L21/02661 ,  C23C16/0245 ,  C23C16/4405 ,  C23C16/481 ,  H01L21/02046 ,  H01L21/02049 ,  H01L21/02057 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02639 ,  H01L21/67115 ,  H01L21/67184 ,  H01L21/67207

Abstract: The present disclosure generally relates to methods for removing contaminants and native oxides from substrate surfaces. The method includes exposing a surface of the substrate to first hydrogen radical species, wherein the substrate is silicon germanium having a concentration of germanium above about 30%, then exposing the surface of the substrate to a plasma formed from a fluorine-containing precursor and a hydrogen-containing precursor, and then exposing the surface of the substrate to second hydrogen radical species.

Abstract translation: 本公开一般涉及从基底表面去除污染物和天然氧化物的方法。 该方法包括将衬底的表面暴露于第一氢自由基物质，其中衬底是具有高于约30％的锗浓度的硅锗，然后将衬底的表面暴露于由含氟前体形成的等离子体 含氢前体，然后将底物的表面暴露于第二氢自由基物质。