公开(公告)号：US20240021433A1

公开(公告)日：2024-01-18

申请号：US17965727

申请日：2022-10-13

Applicant: Applied Materials, Inc.

Inventor： Scott FALK ,  Rajesh PRASAD ,  Sarah Michelle BOBEK ,  Harry WHITESELL ,  Kurt DECKER-LUCKE ,  Kyu-Ha SHIM ,  Adaeze OSONKIE ,  Tomohiko KITAJIMA

IPC: H01L21/3115 ,  H01L21/311 ,  H01L21/266 ,  H01L21/308

CPC classification number: H01L21/31155 ,  H01L21/31116 ,  H01L21/266 ,  H01L21/3086

Abstract: Methods for depositing a hardmask with ions implanted at different tilt angles are described herein. By performing ion implantation to dope an amorphous carbon hardmask at multiple tilt angles, an evenly distributed dopant profiled can be created. The implant tilt angle will determine a dopant profile that enhances the carbon hardmask hardness.