公开(公告)号：US20040127032A1

公开(公告)日：2004-07-01

申请号：US10409985

申请日：2003-04-08

Applicant: AU Optronics Corp.

Inventor： Chia-Tien Peng ,  Ming-Wei Sun

IPC: H01L021/00 ,  H01L021/461 ,  H01L021/84

CPC classification number: H01L27/127 ,  H01L21/02052 ,  H01L27/1214

Abstract: A process for cleaning a silicon surface. First, a silicon surface is cleaned with an oxidant solution. Next, the silicon surface is rinsed with HF vapor or liquid and then with the silicon surface with hydrogen water or deionized water under megasonic agitation. Finally, the silicon surface is cleaned with an oxidant solution a second time. The present inventive cleaning process can be applied in thin film transistor (TFT) fabrication and the TFT obtained has higher electron mobility.

Abstract translation: 一种清洁硅表面的方法。 首先，用氧化剂溶液清洗硅表面。 接下来，用HF蒸汽或液体冲洗硅表面，然后在超声波搅拌下用氢水或去离子水冲洗硅表面。 最后，第二次用氧化剂溶液清洗硅表面。 本发明的清洁工艺可​​以应用于薄膜晶体管（TFT）制造中，并且所获得的TFT具有更高的电子迁移率。

公开(公告)号：US20040157382A1

公开(公告)日：2004-08-12

申请号：US10414282

申请日：2003-04-16

Applicant: AU Optronics Corp.

Inventor： I-Chang Tsao ,  Ming-Wei Sun

IPC: B32B009/00

CPC classification number: H01L21/02686 ,  H01L21/2026 ,  H01L21/2205 ,  H01L27/1248 ,  Y10T428/12528 ,  Y10T428/12674 ,  Y10T428/12993 ,  Y10T428/249953 ,  Y10T428/249956 ,  Y10T428/249969 ,  Y10T428/31

Abstract: A diffusion barrier multi-layer structure for a TFT LCD by the LTPS process and the process for fabricating thereof are disclosed. By increasing the coarseness between two layers of the diffusion barrier multi-layer structure with a plasma treatment, or by forming a loose and porous impurity collecting layer between two layers of the diffusion barrier multi-layer structure to trap the impurity atoms, the impurity diffusion can be effectively obstructed.

Abstract translation: 公开了一种通过LTPS工艺制造TFT LCD的扩散阻挡层的多层结构及其制造方法。 通过用等离子体处理来增加扩散阻挡层多层结构的两层之间的粗糙度，或者通过在扩散阻挡层多层结构的两层之间形成松散多孔的杂质收集层来捕获杂质原子，杂质扩散 可以有效阻碍。