公开(公告)号：US20170178956A1

公开(公告)日：2017-06-22

申请号：US15384219

申请日：2016-12-19

Applicant: APPLIED MATERIALS, INC.

Inventor： Jin Hee PARK ,  Tae Hong HA ,  Sang-Hyeob LEE ,  Thomas Jongwan KWON ,  Jaesoo AHN ,  Xianmin TANG ,  Er-Xuan PING ,  Sree KESAPRAGADA

IPC: H01L21/768 ,  C23C16/458 ,  C23C16/48 ,  C23C16/455 ,  H01L21/285 ,  H01L21/67

CPC classification number: H01L21/76879 ,  C23C16/045 ,  C23C16/16 ,  C23C16/18 ,  C23C16/45512 ,  C23C16/45561 ,  C23C16/481 ,  C23C16/56 ,  H01L21/28556 ,  H01L21/28568 ,  H01L21/67017 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/6719 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76876 ,  H01L21/76882 ,  H01L21/76883 ,  H01L23/53209 ,  H01L27/11556 ,  H01L27/11582

Abstract: Methods and apparatus for depositing a cobalt layer in a feature, such as, a word line formed in a substrate, are provided herein. In some embodiments, method of processing a substrate includes: exposing a substrate at a first temperature to a cobalt containing precursor to deposit a cobalt layer within a word line feature formed in the substrate, wherein the word line feature is part of a 3D NAND device; and annealing the substrate to remove contaminants from the cobalt layer and to reflow the cobalt layer into the word line feature, wherein the substrate is at a second temperature greater than the first temperature during the annealing.