Temperature-based adjustments for in-memory matrix multiplication

    公开(公告)号:US11507641B2

    公开(公告)日:2022-11-22

    申请号:US16428903

    申请日:2019-05-31

    Abstract: Techniques for performing in-memory matrix multiplication, taking into account temperature variations in the memory, are disclosed. In one example, the matrix multiplication memory uses ohmic multiplication and current summing to perform the dot products involved in matrix multiplication. One downside to this analog form of multiplication is that temperature affects the accuracy of the results. Thus techniques are provided herein to compensate for the effects of temperature increases on the accuracy of in-memory matrix multiplications. According to the techniques, portions of input matrices are classified as effective or ineffective. Effective portions are mapped to low temperature regions of the in-memory matrix multiplier and ineffective portions are mapped to high temperature regions of the in-memory matrix multiplier. The matrix multiplication is then performed.

    TEMPERATURE-BASED ADJUSTMENTS FOR IN-MEMORY MATRIX MULTIPLICATION

    公开(公告)号:US20200380063A1

    公开(公告)日:2020-12-03

    申请号:US16428903

    申请日:2019-05-31

    Abstract: Techniques for performing in-memory matrix multiplication, taking into account temperature variations in the memory, are disclosed. In one example, the matrix multiplication memory uses ohmic multiplication and current summing to perform the dot products involved in matrix multiplication. One downside to this analog form of multiplication is that temperature affects the accuracy of the results. Thus techniques are provided herein to compensate for the effects of temperature increases on the accuracy of in-memory matrix multiplications. According to the techniques, portions of input matrices are classified as effective or ineffective. Effective portions are mapped to low temperature regions of the in-memory matrix multiplier and ineffective portions are mapped to high temperature regions of the in-memory matrix multiplier. The matrix multiplication is then performed.

    Page retirement techniques for multi-page DRAM faults

    公开(公告)号:US12216539B2

    公开(公告)日:2025-02-04

    申请号:US17977001

    申请日:2022-10-31

    Abstract: A processing system employs techniques for enhancing dynamic random access memory (DRAM) page retirement to facilitate identification and retirement of pages affected by multi-page DRAM faults. In response to detecting an uncorrectable error at a first page of DRAM, the processing system identifies a second page of the DRAM for potential retirement based on one or more of physical proximity to the first page, inclusion in a range of addresses stored at a fault map that tracks addresses of DRAM pages having detected faults, and predicting a set of pages to check for faults based on misses at a translation lookaside buffer (TLB).

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