公开(公告)号：US20100043024A1

公开(公告)日：2010-02-18

申请号：US12192141

申请日：2008-08-15

Applicant: WEI-CHIN HUANG ,  HUI-JU YU

Inventor： WEI-CHIN HUANG ,  HUI-JU YU

IPC: G06F3/00

CPC classification number: H04N7/162 ,  G06Q30/02 ,  H04N21/2385 ,  H04N21/25883 ,  H04N21/4122 ,  H04N21/41415 ,  H04N21/4223 ,  H04N21/44218 ,  H04N21/44222 ,  H04N21/4425 ,  H04N21/6377

Abstract: A channel switching module is disclosed. The channel switching module includes a server host, an audio/video player and a display device. The server host has a controller for respectively connecting and controlling an audio/video processor, a signal transmission module and a channel switching unit, wherein the audio/video processor encodes/decodes to the internal audio/video files, and the channel switching unit switches channels, and the signal transmission module transmits out a selected audio/video signal. The audio/video player has a signal transmission module for receiving the audio/video signal transmitted by the server host and a controller for connecting and controlling an executing unit and a display device for playing.

Abstract translation: 公开了一种通道切换模块。 频道切换模块包括服务器主机，音频/视频播放器和显示设备。 服务器主机具有用于分别连接和控制音频/视频处理器，信号传输模块和信道切换单元的控制器，其中音频/视频处理器对内部音频/视频文件进行编码/解码，并且信道切换单元切换 信道，并且信号传输模块发送选定的音频/视频信号。 音频/视频播放器具有用于接收由服务器主机发送的音频/视频信号的信号传输模块和用于连接和控制执行单元和用于播放的显示设备的控制器。

公开(公告)号：US5950094A

公开(公告)日：1999-09-07

申请号：US252510

申请日：1999-02-18

Applicant: Shih-Chi Lin ,  Hui-ju Yu ,  Yen-Ming Chen ,  Hui-Hua Chang

Inventor： Shih-Chi Lin ,  Hui-ju Yu ,  Yen-Ming Chen ,  Hui-Hua Chang

IPC: H01L21/762 ,  H01L21/76

CPC classification number: H01L21/76245 ,  H01L21/76264 ,  H01L21/7627 ,  H01L21/76283 ,  Y10S148/05 ,  Y10S438/96

Abstract: The present invention provides a method of fabricating fully dielectric isolated silicon (FDIS) by anodizing a buried doped silicon layer through trenches formed between active areas to form a porous silicon layer; oxidizing the porous silicon layer through the trenches to form a buried oxide layer; and by depositing a dielectric in the trenches. The process begins by forming a buried doped layer in a silicon substrate defining a silicon top layer over the conductive buried doped layer. The silicon top layer and the buried doped layer are patterned to form trenches that extend into but not through the buried doped layer. The trenches define isolated silicon regions. The buried doped layer is anodized to form a porous silicon layer. The porous silicon layer is converted into a buried oxide layer by oxidation. The oxidation step also forms a liner oxide layer on the tops and sidewalls of the isolated silicon regions. Ion species can optionally be implanted into the sidewalls of the isolated silicon regions to form lightly doped regions to act as channel stops. A fill oxide layer is deposited over the buried oxide layer and the liner oxide layer. The fill oxide layer and the liner oxide layer are removed down to the level of the top of the isolated silicon regions thereby exposing a fully dielectric isolated silicon.

Abstract translation: 本发明提供了通过在有源区之间形成的沟槽阳极氧化掩埋掺杂硅层来制造全介电隔离硅（FDIS）的方法，以形成多孔硅层; 通过沟槽氧化多孔硅层以形成掩埋氧化物层; 并通过在沟槽中沉积电介质。 该过程开始于在硅衬底中形成掩埋掺杂层，该衬底在导电掩埋掺杂层上限定硅顶层。 图案化硅顶层和掩埋掺杂层以形成延伸到但不穿过掩埋掺杂层的沟槽。 沟槽定义了隔离的硅区域。 掩埋掺杂层被阳极化以形成多孔硅层。 通过氧化将多孔硅层转化为掩埋氧化物层。 氧化步骤还在隔离硅区域的顶部和侧壁上形成衬垫氧化物层。 可以将离子种类任选地注入到隔离的硅区域的侧壁中以形成轻掺杂区域，以充当通道停止。 填埋氧化物层沉积在掩埋氧化物层和衬里氧化物层上。 将填充氧化物层和衬垫氧化物层去除到分离的硅区域的顶部的水平面，从而暴露完全介电的隔离硅。