- 专利标题： Metal gate electrode of a semiconductor device
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申请号： US13484047申请日： 2012-05-30
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公开(公告)号： US09991375B2公开(公告)日： 2018-06-05
- 发明人: Jr-Jung Lin , Chih-Han Lin , Jin-Aun Ng , Ming-Ching Chang , Chao-Cheng Chen
- 申请人： Jr-Jung Lin , Chih-Han Lin , Jin-Aun Ng , Ming-Ching Chang , Chao-Cheng Chen
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Slater Matsil, LLP
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/283 ; H01L29/49 ; H01L29/66 ; H01L21/8238
摘要：
The invention relates to integrated circuit fabrication, and more particularly to a metal gate electrode. An exemplary structure for a semiconductor device comprises a substrate comprising a major surface; a first rectangular gate electrode on the major surface comprising a first layer of multi-layer material; a first dielectric material adjacent to one side of the first rectangular gate electrode; and a second dielectric material adjacent to the other 3 sides of the first rectangular gate electrode, wherein the first dielectric material and the second dielectric material collectively surround the first rectangular gate electrode.
公开/授权文献
- US20130320410A1 METAL GATE ELECTRODE OF A SEMICONDUCTOR DEVICE 公开/授权日：2013-12-05
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