- 专利标题： Method for treating a gallium nitride layer comprising dislocations
-
申请号： US15363616申请日： 2016-11-29
-
公开(公告)号： US09991341B2公开(公告)日： 2018-06-05
- 发明人: Arnaud Yvon
- 申请人： STMICROELECTRONICS (TOURS) SAS
- 申请人地址： FR Tours
- 专利权人： STMicroelectronics (Tours) SAS
- 当前专利权人： STMicroelectronics (Tours) SAS
- 当前专利权人地址： FR Tours
- 代理机构： Seed IP Law Group LLP
- 优先权： FR1358324 20130830
- 主分类号： H01L29/06
- IPC分类号： H01L29/06 ; H01L21/02 ; H01L21/306 ; H01L21/322 ; H01L29/20 ; H01L29/66 ; H01L29/36 ; H01L29/872
摘要：
A method is for treating a doped gallium nitride substrate of a first conductivity type, having dislocations emerging on the side of at least one of its surfaces. The method may include: a) forming, where each dislocation emerges, a recess extending into the substrate from the at least one surface; and b) filling the recesses with doped gallium nitride of the second conductivity type.
公开/授权文献
信息查询
IPC分类:
