Invention Grant
- Patent Title: Cell having shifted boundary and boundary-shift scheme
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Application No.: US15043858Application Date: 2016-02-15
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Publication No.: US09984192B2Publication Date: 2018-05-29
- Inventor: Kuo-Nan Yang , Chou-Kun Lin , Jerry Chang-Jui Kao , Yi-Chuin Tsai , Chien-Ju Chao , Chung-Hsing Wang
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company
- Current Assignee: Taiwan Semiconductor Manufacturing Company
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: G06F17/50
- IPC: G06F17/50

Abstract:
An embodiment cell shift scheme includes abutting a first transistor cell against a second transistor cell and shifting a place and route boundary away from a polysilicon disposed between the first transistor cell and the second transistor cell. In an embodiment, the cell shift scheme includes shifting the place and route boundary to prevent a mismatch between a layout versus schematic (LVS) netlist and a post-simulation netlist.
Public/Granted literature
- US20160162619A1 Cell Having Shifted Boundary and Boundary-Shift Scheme Public/Granted day:2016-06-09
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