- 专利标题: Resistance change memory
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申请号: US15054706申请日: 2016-02-26
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公开(公告)号: US09954029B2公开(公告)日: 2018-04-24
- 发明人: Chika Tanaka , Hiroki Noguchi , Shinobu Fujita
- 申请人: KABUSHIKI KAISHA TOSHIBA
- 申请人地址: JP Minato-ku
- 专利权人: KABUSHIKI KAISHA TOSHIBA
- 当前专利权人: KABUSHIKI KAISHA TOSHIBA
- 当前专利权人地址: JP Minato-ku
- 代理机构: Oblon, McClelland, Maier & Neustadt, L.L.P.
- 优先权: JP2014-188737 20140917
- 主分类号: H01L27/22
- IPC分类号: H01L27/22 ; H01L43/08
摘要:
According to one embodiment, a resistance change memory includes a semiconductor layer having a first surface in a first direction and a second surface in a second direction crossing the first direction, extending in a third direction crossing the first and second directions, and having first and second portions, a gate electrode covering the first and second surfaces between the first and second portions, a first conductive line connected to the first portion, a resistance change element having first and second terminals, the first terminal connected to the second portion, a second conductive line connected to the second terminal, and a third conductive line connected to the gate electrode.
公开/授权文献
- US20160181319A1 RESISTANCE CHANGE MEMORY 公开/授权日:2016-06-23
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