- 专利标题： Semiconductor device and manufacturing method thereof
-
申请号： US15446978申请日： 2017-03-01
-
公开(公告)号： US09953894B2公开(公告)日： 2018-04-24
- 发明人: Shingo Masuko , Yoshiharu Takada , Kazuo Fujimura
- 申请人： KABUSHIKI KAISHA TOSHIBA
- 申请人地址： JP Tokyo
- 专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人地址： JP Tokyo
- 代理机构： Foley & Lardner LLP
- 优先权： JP2016-181793 20160916
- 主分类号： H01L23/36
- IPC分类号： H01L23/36 ; H01L23/367 ; H01L29/08 ; H01L29/417 ; H01L21/48 ; H01L23/373 ; H01L23/544 ; H01L21/78 ; H01L21/304 ; H01L21/02 ; H01L21/311
摘要：
A semiconductor device including: a semiconductor element, a substrate having a first surface on which the semiconductor element is provided, and a second surface located opposite the first surface, a metal species provided on the second surface, and a plated metal portion provided at least in part on the second surface on the metal species. The semiconductor device further includes a first region where the plated metal portion is provided and a second region where the plated metal portion is not provided are alternately arranged at a peripheral portion of the second surface.
公开/授权文献
- US20180082918A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 公开/授权日：2018-03-22
信息查询
IPC分类:
