- 专利标题： Methods of modulating the morphology of epitaxial semiconductor material
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申请号： US15163313申请日： 2016-05-24
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公开(公告)号： US09953873B2公开(公告)日： 2018-04-24
- 发明人: Bhupesh Chandra , Claude Ortolland , Gregory G. Freeman , Viorel Ontalus , Christopher D. Sheraw , Timothy J. McArdle , Paul Chang
- 申请人： GLOBALFOUNDRIES INC.
- 申请人地址： KY Grand Cayman
- 专利权人： GLOBALFOUNDRIES Inc.
- 当前专利权人： GLOBALFOUNDRIES Inc.
- 当前专利权人地址： KY Grand Cayman
- 代理机构： Thompson Hine LLP
- 代理商 Yuanmin Cai
- 主分类号： H01L21/8234
- IPC分类号： H01L21/8234 ; H01L21/8238 ; H01L21/02 ; H01L21/32 ; H01L27/088
摘要：
Chip structures and fabrication methods for forming such chip structures. A first device structure has a structural feature comprised of a first dielectric material and a second device structure has a structural feature comprised of a second dielectric material. A semiconductor layer has a first section adjacent to the structural feature of the first device structure and a second section adjacent to the structural feature of the second device structure. The first section of the semiconductor layer has a popped relationship relative to the structural feature comprised of the first dielectric material. The second section of the semiconductor layer includes a portion that has a pinned relationship relative to a portion of the structural feature comprised of the second dielectric material.
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