Invention Grant
- Patent Title: Process of manufacturing an open pattern inductor
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Application No.: US13219459Application Date: 2011-08-26
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Publication No.: US09929229B2Publication Date: 2018-03-27
- Inventor: Kie Y. Ahn , Leonard Forbes
- Applicant: Kie Y. Ahn , Leonard Forbes
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman Lundberg & Woessner, P.A.
- Main IPC: H01F41/04
- IPC: H01F41/04 ; H01F17/00 ; H01L49/02 ; H01L27/08 ; H01P11/00 ; H01P9/02 ; H01F27/36

Abstract:
Various embodiments includes a stacked open pattern inductor fabricated above a semiconductor substrate. The stacked open pattern inductor includes a plurality of parallel open conducting patterns embedded in a magnetic oxide or in an insulator and a magnetic material. A layer of magnetic material may be located above the inductor and below the inductor to confine electronic noise generated in the stacked open pattern inductor to the area occupied by the inductor. The stacked open pattern inductor may include a magnetic material directly contacts one of the conducting patterns and the substrate. The stacked open pattern inductor may be fabricated using conventional integrated circuit manufacturing processes, and the inductor may be used in connection with computer systems.
Public/Granted literature
- US20110308072A1 OPEN PATTERN INDUCTOR Public/Granted day:2011-12-22
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