- 专利标题: Method for manufacturing light-emitting device
-
申请号: US15141157申请日: 2016-04-28
-
公开(公告)号: US09923174B2公开(公告)日: 2018-03-20
- 发明人: Akihiro Chida , Kaoru Hatano , Tomoya Aoyama , Ryu Komatsu , Masatoshi Kataniwa
- 申请人: Semiconductor Energy Laboratory Co., Ltd.
- 申请人地址: JP
- 专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址: JP
- 代理机构: Husch Blackwell LLP
- 优先权: JP2012-105553 20120504; JP2013-053332 20130315
- 主分类号: H01L27/32
- IPC分类号: H01L27/32 ; H01L51/52 ; H01L51/56 ; H01L27/12
摘要:
A method for exposing an electrode terminal covered with an organic film in a light-emitting device without damaging the electrode terminal is provided. In a region of the electrode terminal to which electric power from an external power supply or an external signal is input, an island-shaped organic compound-containing layer is formed and the organic film is formed thereover. The organic film is removed by utilizing low adhesion of an interface between the organic compound-containing layer and the electrode terminal, whereby the electrode terminal can be exposed without damage to the electrode terminal.
公开/授权文献
- US20160240822A1 Method for Manufacturing Light-Emitting Device 公开/授权日:2016-08-18
信息查询
IPC分类: