Invention Grant
- Patent Title: Self-aligned transistors for dual-side processing
-
Application No.: US15266972Application Date: 2016-09-15
-
Publication No.: US09917062B1Publication Date: 2018-03-13
- Inventor: Sinan Goktepeli
- Applicant: Qualcomm Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Seyfarth Shaw LLP
- Main IPC: H01L23/544
- IPC: H01L23/544 ; H01L27/12 ; H01L21/683 ; H01L21/84 ; H01L21/762 ; H01L27/13

Abstract:
An integrated circuit structure may include an alignment column on a front-side surface of an isolation layer. The alignment column may extend through a backside surface opposite the front-side surface of the isolation layer. The integrated circuit structure may also include front-side transistors on the front-side surface of the isolation layer. The integrated circuit structure may further include backside transistors on the backside surface of the isolation layer. A first front-side transistor is aligned with a first backside transistor according to the alignment column.
Public/Granted literature
- US20180076145A1 SELF-ALIGNED TRANSISTORS FOR DUAL-SIDE PROCESSING Public/Granted day:2018-03-15
Information query
IPC分类: