Self-aligned transistors for dual-side processing
Abstract:
An integrated circuit structure may include an alignment column on a front-side surface of an isolation layer. The alignment column may extend through a backside surface opposite the front-side surface of the isolation layer. The integrated circuit structure may also include front-side transistors on the front-side surface of the isolation layer. The integrated circuit structure may further include backside transistors on the backside surface of the isolation layer. A first front-side transistor is aligned with a first backside transistor according to the alignment column.
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