Invention Grant
- Patent Title: Semiconductor device and semiconductor manufacturing process
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Application No.: US15335351Application Date: 2016-10-26
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Publication No.: US09911709B1Publication Date: 2018-03-06
- Inventor: Chun-Jun Zhuang , Wei-Hang Tai , Pin-Ha Chuang
- Applicant: Advanced Semiconductor Engineering, Inc.
- Applicant Address: TW Kaohsiung
- Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
- Current Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
- Current Assignee Address: TW Kaohsiung
- Agency: Foley & Lardner LLP
- Agent Cliff Z. Liu
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L23/24 ; H01L25/00 ; H01L25/065

Abstract:
A semiconductor device includes a first semiconductor die, a second semiconductor die and a plurality of supporting structures. The first semiconductor die includes a plurality of first bumps disposed adjacent to a first active surface thereof. The second semiconductor die includes a plurality of second bumps disposed adjacent to a second active surface thereof. The second bumps are bonded to the first bumps. The supporting structures are disposed between the first active surface of the first semiconductor die and the second active surface of the second semiconductor die. The supporting structures are electrically isolated and are disposed adjacent to a peripheral region of the second active surface of the second semiconductor die.
Information query
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