发明授权
- 专利标题： Microelectronic assemblies formed using metal silicide, and methods of fabrication
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申请号： US15203013申请日： 2016-07-06
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公开(公告)号： US09905523B2公开(公告)日： 2018-02-27
- 发明人: Hong Shen , Liang Wang , Arkalgud R. Sitaram
- 申请人： Invensas Corporation
- 申请人地址： US CA San Jose
- 专利权人： INVENSAS CORPORATION
- 当前专利权人： INVENSAS CORPORATION
- 当前专利权人地址： US CA San Jose
- 代理机构： Haynes and Boone, LLP
- 主分类号： H01L23/00
- IPC分类号： H01L23/00 ; H01L23/522 ; H01L23/532 ; H01L25/065 ; H01L23/14 ; H01L23/498 ; H01L21/48
摘要：
Two microelectronic components (110, 120), e.g. a die and an interposer, are bonded to each other. One of the components' contact pads (110C) include metal, and the other component has silicon (410) which reacts with the metal to form metal silicide (504). Then a hole (510) is made through one of the components to reach the metal silicide and possibly even the unreacted metal (110C) of the other component. The hole is filled with a conductor (130), possibly metal, to provide a conductive via that can be electrically coupled to contact pads (120C.B) attachable to other circuit elements or microelectronic components, e.g. to a printed circuit board.
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