- 专利标题: Power semiconductor module and method for manufacturing the same
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申请号: US15244846申请日: 2016-08-23
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公开(公告)号: US09893000B2公开(公告)日: 2018-02-13
- 发明人: Jae Sik Choi , Si Hyeon Go , Jun Young Heo , Moon Taek Sung , Dong Seong Oh
- 申请人: Magnachip Semiconductor, Ltd.
- 申请人地址: KR Cheongju-si
- 专利权人: Magnachip Semiconductor, Ltd.
- 当前专利权人: Magnachip Semiconductor, Ltd.
- 当前专利权人地址: KR Cheongju-si
- 代理机构: NSIP Law
- 优先权: KR10-2016-0038582 20160330
- 主分类号: H01L23/495
- IPC分类号: H01L23/495 ; H01L25/18 ; H01L23/373 ; H01L21/48 ; H01L23/00
摘要:
A power semiconductor module includes: a substrate including first, second, and third metal patterns separated from each other, a semiconductor element located on the substrate, a lead frame located on the substrate and including first, second, third, and fourth bodies; a first terminal connected to the first body, a second terminal connected to the second body, and a third common terminal that connects the third body and the fourth body, wherein a length of the third common terminal is longer than that of the first and second terminals.
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