Invention Grant
- Patent Title: Semiconductor device and method for manufacturing the same
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Application No.: US15212718Application Date: 2016-07-18
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Publication No.: US09892985B2Publication Date: 2018-02-13
- Inventor: Po Chun Lin
- Applicant: NANYA TECHNOLOGY CORPORATION
- Applicant Address: TW Taoyuan
- Assignee: Nanya Technology Corporation
- Current Assignee: Nanya Technology Corporation
- Current Assignee Address: TW Taoyuan
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L23/48 ; H01L23/528 ; H01L23/532 ; H01L23/14 ; H01L23/498

Abstract:
One aspect of the present disclosure provides a semiconductor device. In some embodiments, the semiconductor device includes an integrated circuit die, at least one conductive terminal disposed on the integrated circuit die, a frame positioned on the integrated circuit die, wherein the frame substantially exposes the at least one conductive terminal, and at least one conductive bump positioned in the frame, wherein the at least one conductive bump electrically connects the at least one conductive terminal.
Public/Granted literature
- US20180019174A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2018-01-18
Information query
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