发明授权
- 专利标题： Method and structure to fabricate closely packed hybrid nanowires at scaled pitch
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申请号： US15337225申请日： 2016-10-28
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公开(公告)号： US09865508B2公开(公告)日： 2018-01-09
- 发明人: Veeraraghavan S. Basker , Zuoguang Liu , Tenko Yamashita , Chun-chen Yeh
- 申请人： International Business Machines Corporation
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Michael J. Chang, LLC
- 代理商 Vazken Alexanian
- 主分类号： H01L27/01
- IPC分类号： H01L27/01 ; H01L21/8238 ; H01L29/66 ; H01L21/02 ; H01L21/308 ; H01L21/306 ; H01L21/283 ; H01L21/311 ; H01L27/092 ; H01L29/06 ; H01L29/201 ; H01L29/78 ; H01L29/423 ; H01L29/49 ; H01L29/786
摘要：
Techniques for forming closely packed hybrid nanowires are provided. In one aspect, a method for forming hybrid nanowires includes: forming alternating layers of a first and a second material in a stack on a substrate; forming a first trench(es) and a second trench(es) in the stack; laterally etching the layer of the second material selectively within the first trench(es) to form first cavities in the layer; growing a first epitaxial material within the first trench(es) filling the first cavities; laterally etching the layer of the second material selectively within the second trench(es) to form second cavities in the layer; growing a second epitaxial material within the second trench(es) filling the second cavities, wherein the first epitaxial material in the first cavities and the second epitaxial material in the second cavities are the hybrid nanowires. A nanowire FET device and method for formation thereof are also provided.
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