- 专利标题： Non-volatile semiconductor memory device
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申请号： US15261162申请日： 2016-09-09
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公开(公告)号： US09859446B2公开(公告)日： 2018-01-02
- 发明人: Takashi Hayashi
- 申请人： TOSHIBA MEMORY CORPORATION
- 申请人地址： JP Tokyo
- 专利权人： TOSHIBA MEMORY CORPORATION
- 当前专利权人： TOSHIBA MEMORY CORPORATION
- 当前专利权人地址： JP Tokyo
- 代理机构： Foley & Lardner LLP
- 主分类号： H01L29/788
- IPC分类号： H01L29/788 ; H01L29/51 ; H01L29/792 ; H01L29/423
摘要：
According to one embodiment, a non-volatile semiconductor memory device includes: a tunnel insulation film provided on a semiconductor substrate; a floating gate electrode provided on the tunnel insulation film; an inter-electrode insulation film provided on the floating gate electrode; and a control gate electrode provided on the inter-electrode insulation film. The inter-electrode insulation film includes: a lower insulation film provided on the floating gate electrode side; and an upper insulation film provided on the control gate electrode side. The lower insulation film includes: N (N is an integer of 2 or larger) electric charge accumulation layers; and boundary insulation films provided between the electric charge accumulation layers.
公开/授权文献
- US20170263779A1 NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE 公开/授权日：2017-09-14
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