Invention Grant
- Patent Title: Connecting techniques for stacked CMOS devices
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Application No.: US15219357Application Date: 2016-07-26
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Publication No.: US09853008B2Publication Date: 2017-12-26
- Inventor: Hsiang-Jen Tseng , Wei-Yu Chen , Ting-Wei Chiang , Li-Chun Tien
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Eschweiler & Potashnik, LLC
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L25/065 ; H01L23/528 ; H01L25/00 ; H01L21/768 ; H01L23/48 ; H01L21/822 ; H01L27/06 ; H01L23/535 ; H01L21/74 ; H01L23/522 ; H01L23/532

Abstract:
In some embodiments, the present disclosure relates to an integrated chip having an inter-tier interconnecting structure having horizontal components, which is arranged within a semiconductor substrate and configured to electrically couple a first device tier to a second device tier. The integrated chip has a first device tier with a first semiconductor substrate. A first inter-tier interconnecting structure is disposed inside the first semiconductor substrate. The first inter-tier interconnecting structure has a first segment extending in a first direction and a second segment protruding outward from a sidewall of the first segment in a second direction substantially perpendicular to the first direction. A second device tier is electrically coupled to the first device tier by the first inter-tier interconnecting structure.
Public/Granted literature
- US20160336289A1 CONNECTING TECHNIQUES FOR STACKED CMOS DEVICES Public/Granted day:2016-11-17
Information query
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