Immersion liquid, exposure apparatus, and exposure process

Invention Grant

US09772565B2 Immersion liquid, exposure apparatus, and exposure process 有权

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Patent Title: Immersion liquid, exposure apparatus, and exposure process
Application No.: US15250579

Application Date: 2016-08-29
Publication No.: US09772565B2

Publication Date: 2017-09-26
Inventor: Hans Jansen , Marco Koert Stavenga , Jacobus Johannus Leonardus Hendricus Verspay , Franciscus Johannes Joseph Janssen , Anthonie Kuijper
Applicant: ASML NETHERLANDS B.V.
Applicant Address: NL Veldhoven
Assignee: ASML NETHERLANDS B.V.
Current Assignee: ASML NETHERLANDS B.V.
Current Assignee Address: NL Veldhoven
Agency: Pillsbury Winthrop Shaw Pittman LLP
Main IPC: H01L21/469
IPC: H01L21/469 ; G03F7/20

Immersion liquid, exposure apparatus, and exposure process

Abstract:

An immersion liquid is provided comprising an ion-forming component, e.g. an acid or a base, which has a relatively high vapor pressure. Also provided are lithography processes and lithography systems using the immersion liquid.

Public/Granted literature

US20160363873A1 IMMERSION LIQUID, EXPOSURE APPARATUS, AND EXPOSURE PROCESS Public/Granted day:2016-12-15

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46	....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/469	......在半导体材料上形成绝缘层的，例如，用于掩膜的或应用光刻技术的（密封层入H01L21/56）以及这些层的后处理