Invention Grant
- Patent Title: Methods of forming patterns using photoresists
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Application No.: US15047659Application Date: 2016-02-19
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Publication No.: US09772555B2Publication Date: 2017-09-26
- Inventor: Cheol-Hong Park , Sang-Yoon Woo , Cha-Won Koh , Hyun-Woo Kim , Sang-Min Park
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-Si, Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-Si, Gyeonggi-Do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2015-0078132 20150602
- Main IPC: G03F7/11
- IPC: G03F7/11 ; G03F7/40 ; G03F7/20 ; H01L21/027 ; H01L21/033 ; G03F7/32 ; H01L21/308 ; H01L21/311 ; H01L21/3213 ; H01L21/768 ; H01L27/108
Abstract:
In a method of forming a pattern, a lower coating layer and a photoresist layer are sequentially formed on an object layer. An exposure process may be performed such that the photoresist layer is divided into an exposed portion and a non-exposed portion. A portion of the lower coating layer overlapping or contacting the exposed portion is at least partially transformed into a polarity conversion portion that has a polarity substantially identical to that of the exposed portion. The non-exposed portion of the photoresist layer is selectively removed.
Public/Granted literature
- US20160358778A1 METHODS OF FORMING PATTERNS USING PHOTORESISTS Public/Granted day:2016-12-08
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