- 专利标题: Selective segment via plating process and structure
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申请号: US14834180申请日: 2015-08-24
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公开(公告)号: US09763327B2公开(公告)日: 2017-09-12
- 发明人: Kwan Pen , Pui Yin Yu
- 申请人: Multek Technologies Ltd.
- 申请人地址: US CA San Jose
- 专利权人: Multek Technologies Limited
- 当前专利权人: Multek Technologies Limited
- 当前专利权人地址: US CA San Jose
- 代理机构: Haverstock & Owens LLP
- 优先权: CN201510121886 20150319; CN201510127856 20150323
- 主分类号: H05K1/11
- IPC分类号: H05K1/11 ; H05K1/02 ; H05K3/42 ; H05K3/46 ; H05K3/00 ; H05K3/06 ; H05K3/18
摘要:
A selective segment via plating process for manufacturing a circuit board selectively interconnects inner conductive layers as separate segments within the same via. Plating resist is plugged into an inner core through hole and then stripped off after an electroless plating process. Stripping of the electroless plating on the plating resist results in a plating discontinuity on the via wall. In a subsequent electroplating process, the inner core layer can not be plated due to the plating discontinuity. The resulting circuit board structure has separate electrically interconnected segments within the via.
公开/授权文献
- US20160278207A1 SELECTIVE SEGMENT VIA PLATING PROCESS AND STRUCTURE 公开/授权日:2016-09-22
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