- 专利标题: Level shifter circuit using boosting circuit
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申请号: US15065166申请日: 2016-03-09
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公开(公告)号: US09762216B1公开(公告)日: 2017-09-12
- 发明人: Mahmut Sinangil , Hsin-Hsin Ko , Chiting Cheng , Yen-Huei Chen , Hung-Jen Liao , Jonathan Tsung-Yung Chang
- 申请人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 申请人地址: TW Hsinchu
- 专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址: TW Hsinchu
- 代理机构: Sterne, Kessler, Goldstein & Fox, PLLC
- 主分类号: H03L5/00
- IPC分类号: H03L5/00 ; H03K3/356 ; H03K19/0185
摘要:
A level shifter circuit is provided that uses a boosting circuit. The boosting circuit is configured to improve the operation of the level shifter circuit when the high voltages of voltage domains across the level shifter circuit are widely separated. A circuit apparatus includes a core level shifter circuit that changes a first voltage of an input signal to a second voltage of an output signal. The circuit apparatus further includes a first boosting circuit that is coupled to the core level shifter circuit and generates a first transient voltage applied to the core level shifter circuit when the input signal transitions from a low value to a high value. The circuit apparatus also includes a second boosting circuit that is coupled to the core level shifter circuit and generates a second transient voltage applied to the core level shifter circuit when the input signal transitions from a high value to a low value.
公开/授权文献
- US20170264276A1 LEVEL SHIFTER CIRCUIT USING BOOSTING CIRCUIT 公开/授权日:2017-09-14
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