- 专利标题: Throttling memory in response to an internal temperature of a memory device
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申请号: US14142466申请日: 2013-12-27
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公开(公告)号: US09746383B2公开(公告)日: 2017-08-29
- 发明人: Pochang Hsu , Animesh Mishra , Jun Shi
- 申请人: Intel Corporation
- 申请人地址: US CA Santa Clara
- 专利权人: Intel Corporation
- 当前专利权人: Intel Corporation
- 当前专利权人地址: US CA Santa Clara
- 代理机构: Jordan IP Law, LLC
- 主分类号: G01K7/01
- IPC分类号: G01K7/01 ; G01K13/00 ; G06F1/20 ; G06F1/32 ; G06F13/16 ; G11C5/04 ; G11C5/14 ; G11C7/04
摘要:
Systems and methods of managing memory devices provide for reduced power consumption and better thermal management through enhanced memory throttling. In one embodiment a memory unit includes a memory device and a temperature measurement module coupled to the memory device. The temperature measurement device measures the internal temperature of the memory device. Memory throttling can therefore be implemented based on more accurate measurements and with a much shorter response time.
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