Invention Grant
- Patent Title: Methods of forming semiconductor devices
-
Application No.: US14979200Application Date: 2015-12-22
-
Publication No.: US09741618B2Publication Date: 2017-08-22
- Inventor: Gudrun Stranzl , Martin Zgaga , Markus Kahn , Guenter Denifl
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater Matsil, LLP
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/78 ; H01L21/762 ; H01L21/02
Abstract:
In one embodiment, a method of forming a semiconductor device includes forming openings in a substrate. The method includes forming a dummy fill material within the openings and thinning the substrate to expose the dummy fill material. The dummy fill material is removed.
Public/Granted literature
- US20170194205A1 Methods of Forming Semiconductor Devices Public/Granted day:2017-07-06
Information query
IPC分类:
