Invention Grant
- Patent Title: Peeling method
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Application No.: US14450463Application Date: 2014-08-04
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Publication No.: US09735398B2Publication Date: 2017-08-15
- Inventor: Tomoya Aoyama , Akihiro Chida , Ryu Komatsu
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP
- Agency: Husch Blackwell LLP
- Priority: JP2013-163029 20130806
- Main IPC: H01L51/56
- IPC: H01L51/56 ; H01L51/00 ; H01L51/52

Abstract:
To improve the yield in a peeling process and improve the yield in a manufacturing process of a flexible light-emitting device or the like, a peeling method includes a first step of forming a peeling layer over a first substrate, a second step of forming a layer to be peeled including a first layer in contact with the peeling layer over the peeling layer, a third step of curing a bonding layer in an overlapping manner with the peeling layer and the layer to be peeled, a fourth step of removing part of the first layer overlapping with the peeled layer and the bonding layer to form a peeling starting point, and a fifth step of separating the peeling layer and the layer to be peeled. The peeling starting point is preferably formed by laser light irradiation.
Public/Granted literature
- US20150044792A1 Peeling Method Public/Granted day:2015-02-12
Information query
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