Invention Grant
- Patent Title: CMOS integrated moving-gate transducer with silicon as a functional layer
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Application No.: US14988842Application Date: 2016-01-06
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Publication No.: US09725298B2Publication Date: 2017-08-08
- Inventor: Ando Feyh , Po-Jui Chen , Markus Ulm
- Applicant: Robert Bosch GmbH
- Applicant Address: DE Stuttgart
- Assignee: Robert Bosch GmbH
- Current Assignee: Robert Bosch GmbH
- Current Assignee Address: DE Stuttgart
- Agency: Maginot, Moore & Beck LLP
- Main IPC: H01L29/84
- IPC: H01L29/84 ; H01L21/50 ; B81C1/00 ; B81B3/00 ; B81B7/00 ; H01L29/772 ; H01L21/02 ; H01L21/58
Abstract:
A method of fabricating a semiconductor device comprises forming a dielectric layer above a substrate, the dielectric layer including a fixed dielectric portion and a proof mass portion, forming a source region and a drain region in the substrate, forming a gate electrode in the proof mass portion, and releasing the proof mass portion, such that the proof mass portion is movable with respect to the fixed dielectric portion and the gate electrode is movable with the proof mass portion relative to the source region and the drain region.
Public/Granted literature
- US20160115013A1 CMOS Integrated Moving-Gate Transducer with Silicon as a Functional Layer Public/Granted day:2016-04-28
Information query
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