- 专利标题: Passive device cell and fabrication process thereof
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申请号: US14874888申请日: 2015-10-05
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公开(公告)号: US09712130B2公开(公告)日: 2017-07-18
- 发明人: Ming-Tzong Yang , Cheng-Chou Hung , Tung-Hsing Lee , Wei-Che Huang
- 申请人: MediaTek Inc.
- 申请人地址: TW Hsin-Chu
- 专利权人: MEDIATEK INC.
- 当前专利权人: MEDIATEK INC.
- 当前专利权人地址: TW Hsin-Chu
- 代理机构: McClure, Qualey & Rodack, LLP
- 主分类号: H03H7/01
- IPC分类号: H03H7/01 ; H03H3/00 ; H01P1/203 ; H01P7/08
摘要:
An implementation of the invention is directed to a passive device cell having a substrate layer, and intermediary layer formed above the substrate layer, and a passive device formed above the intermediary layer. The intermediary layer includes a plurality of LC resonators and a plurality of segmented conductive lines, wherein the plurality of segmented conductive lines are disposed between the plurality of LC resonators.
公开/授权文献
- US20160028359A1 PASSIVE DEVICE CELL AND FABRICATION PROCESS THEREOF 公开/授权日:2016-01-28
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