- 专利标题: Low cost high performance EEPROM device
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申请号: US14985450申请日: 2015-12-31
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公开(公告)号: US09659947B1公开(公告)日: 2017-05-23
- 发明人: Chandrasekar Venkataramani , Qiuji Zhao , Koe Sun Pak , Bai Yen Nguyen , Yoke Weng Tam
- 申请人: GLOBALFOUNDRIES Singapore Pte. Ltd.
- 申请人地址: SG Singapore
- 专利权人: GLOBALFOUNDRIES Singapore Pte. Ltd.
- 当前专利权人: GLOBALFOUNDRIES Singapore Pte. Ltd.
- 当前专利权人地址: SG Singapore
- 代理机构: Horizon IP Pte. Ltd.
- 主分类号: H01L21/336
- IPC分类号: H01L21/336 ; H01L27/11524 ; H01L29/423
摘要:
Devices and methods for forming a device are presented. The method includes providing a substrate prepared with a cell area separated by other active areas by isolation regions. First and second lower sub-gates of first and second transistors are formed in the cell area. A common upper sub-gate of the first and second transistors is formed. The common upper sub-gate and first and second lower sub-gates are separated by an intergate dielectric layer and the common upper sub-gate surrounds the first and second lower sub-gates.
公开/授权文献
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